SINGLE CRYSTAL. NEW POSSIBILITIES.
The foundation for next-generation power.
4H-N SiC wafers, precision substrates and single crystals for the ideas that move industry forward.
ENGINEERED FOR
A higher-performing world.
01 / MATERIAL PORTFOLIO
From conductive 4H-N SiC wafers to semi-insulating substrates and SiC single crystals, start with the material your device architecture actually needs.
CORE MATERIALPOWER DEVICE SUBSTRATES
Nitrogen-doped, conductive silicon carbide substrates for SiC epitaxy and subsequent MOSFET or Schottky diode development.
APPLICATION-SPECIFICRF & EPITAXIAL PLATFORMS
4H semi-insulating and high-purity semi-insulating SiC substrates for projects requiring electrical isolation rather than a conductive current path.
CRYSTAL GROWTH & R&DSINGLE CRYSTAL MATERIALS
SiC single crystal ingots and seed wafers for crystal growth, materials characterization and substrate development projects.
Photos show representative SiC wafer samples, not a certification of diameter, conductivity or grade. Single crystal ingots are not pictured. All products are quoted against a confirmed specification.
02 / APPLICATIONS
SiC wafers sit at the beginning of a device manufacturing chain. Choosing the right silicon carbide substrate helps align epitaxy, defect control and device design with the final application.
Conductive 4H-N SiC wafers support the epitaxial platform used to fabricate vertical SiC power devices. In electric vehicles, these devices are used in traction inverters, on-board chargers and DC–DC converters.
SiC switching devices can reduce conversion losses and support compact, high-power-density designs. A SiC substrate alone does not establish vehicle range, efficiency or automotive qualification.
Discuss power-device SiC wafersSiC wafer selection: agree 4H-N conductivity, resistivity, off-axis direction, CMP surface, BPD/TSD limits and lot-specific inspection data.
4H-N silicon carbide substrates enable the device platforms used in photovoltaic inverters, battery energy storage systems and charging infrastructure. SiC devices can support efficient switching across demanding voltage and power ranges.
Higher switching frequency may reduce passive component size, but EMI, cooling, gate drive and magnetic design must be assessed together. Select SiC wafers to match the intended epitaxy and device process.
Plan your energy SiC substrateSiC wafer selection: match wafer diameter and thickness to the fab, specify surface preparation and establish geometry and defect acceptance limits.
SiC-based MOSFETs and Schottky diodes are used in motor drives, industrial power supplies, UPS systems and high-power conversion equipment. Conductive SiC wafers provide a substrate route for vertical power-device structures.
Wide-bandgap properties and useful thermal conductivity help engineers address high electric fields and heat flow. Final operating temperature and voltage are device-specific, not a wafer guarantee.
Review industrial SiC requirementsSiC wafer selection: production, research and dummy grades are not interchangeable. Define electrical, surface and defect criteria before ordering.
Semi-insulating SiC substrates are used as a platform for GaN-on-SiC RF structures where substrate isolation and heat flow matter. This route differs from conductive 4H-N SiC wafers used for vertical power devices.
SiC single crystals and seed wafers also support crystal-growth research, surface studies and materials characterization. Choose a SiC substrate based on the process rather than its visual appearance.
Discuss RF or research substratesSiC wafer selection: confirm semi-insulating resistivity, purity, surface orientation and epitaxy compatibility. Do not apply N-type resistivity values to HPSI SiC.
Application context describes the use of finished semiconductor devices or epitaxial structures, not a claim that an unprocessed SiC wafer is a complete device. Technical references
03 / MATERIAL ADVANTAGES
Understand what silicon carbide brings to a device platform, and what must still be verified at the SiC wafer and process level.
4H-SiC provides a wide bandgap and high critical electric field, enabling power-device architectures beyond conventional silicon.
SiC supports heat flow in high-power structures. Thermal performance varies with crystal quality, doping, temperature and device construction.
CMP and MP options address different SiC wafer needs. For epitaxy, specify the target face, roughness and surface acceptance criteria.
Diameter is only the beginning. SiC substrate geometry, resistivity, orientation and defect limits must match your process.
Intrinsic material benefits do not imply guaranteed device yield, loss reduction or automotive compliance.
04 / TECHNICAL SPECIFICATIONS
Published portfolio values for SiC wafers. These are reference specifications, not confirmation of current stock or a universal acceptance certificate. Confirm your SiC wafer grade and lot requirements in the quotation.
| Parameter | 2 inch | 3 inch | 4 inch | 6 inch | 8 inch |
|---|---|---|---|---|---|
| Diameter | 50.8 ± 0.3 mm | 76.2 ± 0.3 mm | 100 ± 0.5 mm | 150 ± 0.5 mm | 200 mm nominal* |
| SiC types listed | 4H-N / HPSI / 4H-SEMI 6H-N / 6H-SEMI | 4H-N / HPSI / 4H-SEMI | 4H-N / HPSI / 4H-SEMI | 4H-N / HPSI / 4H-SEMI | 4H-N / HPSI / 4H-SEMI* |
| Thickness options | 330 ± 25 µm 350 ± 25 µm | 350 ± 25 µm 500 ± 25 µm | 350 ± 25 µm 500 ± 25 µm | 350 ± 25 µm 500 ± 25 µm | 350 ± 25 µm 500 ± 25 µm |
| Surface roughness, Ra | ≤ 0.2 nm | ≤ 0.2 nm | ≤ 0.2 nm | ≤ 0.2 nm | ≤ 0.2 nm |
| Warp | ≤ 30 µm | ≤ 30 µm | ≤ 30 µm | ≤ 30 µm | ≤ 45 µm |
| Total thickness variation | ≤ 10 µm | ≤ 10 µm | ≤ 10 µm | ≤ 10 µm | ≤ 10 µm |
| Micropipe density | < 1 cm−2 | < 1 cm−2 | < 1 cm−2 | < 1 cm−2 | < 1 cm−2 |
| Polishing options | CMP / MP; target face and inspection method to be confirmed | ||||
| Edge options | 45° bevel / C-shape; edge geometry and applicable SEMI drawing to be agreed | ||||
| SiC wafer grades | Production grade for MOSFET / SBD; research; dummy; seed wafer | ||||
*The source prints the 8 inch tolerance as “± 03 mm”; it is not interpreted here. The profile lists 8 inch HPSI / semi-insulating types, while the public product overview specifically lists 2–6 inch semi-insulating SiC. Confirm 8 inch non-conductive formats with the team. Custom thickness is subject to review.
FOCUSED PRODUCT REFERENCE
The public 6 inch SiC product listing provides a more specific conductive substrate reference. These values belong to that listing and must not be substituted into every diameter or grade.
Request a 150 mm SiC quoteOne order. One agreed specification. The public product listing and company profile use different geometry and quality limits. Your confirmed quotation, inspection method and lot documentation take precedence. Price range, current inventory and delivery time are not published; request confirmation.
05 / FROM ENQUIRY TO EVALUATION
A useful SiC wafer enquiry gives the material team enough detail to review suitability, supply options and inspection requirements before the order is placed.
Power epitaxy, RF, crystal growth or process trials? State whether conductive or semi-insulating SiC is required.
Agree SiC wafer diameter, grade, thickness, face, off-cut, resistivity, finish and quantity.
Request available SiC inspection data: geometry, roughness, crystal defects and measurement conditions.
Approve the quotation, lot documentation, packaging, lead time and delivery terms before purchase.
Send your specification sheet or put the essentials in your enquiry.
Materials expertise.06 / ABOUT XINKEHUI
Shanghai-based expertise in semiconductor substrates and optical crystal materials.
shanghai xinkehui new materails co.,ltd specializes in the development, production, processing and sales of semiconductor and crystal materials. Our portfolio includes SiC wafers, silicon wafers, sapphire substrates, CVD synthetic diamond, YAG single crystals, ZnSe windows and sapphire watch components.
The company introduction describes an experienced engineering team, precision processing and inspection capabilities, and support for non-standard requirements. This SiC material page brings the wafer and crystal portfolio into focus, so you can discuss a specific process with our team.
07 / MATERIAL CLOSE-UP
Original product-file photography. SiC wafer colour and transparency vary with doping, thickness and lighting; appearance is not a substitute for material testing.
08 / FREQUENTLY ASKED QUESTIONS
Practical guidance for selecting and ordering SiC wafers and silicon carbide substrates.
Ask a specific questionA 4H-N SiC wafer is a nitrogen-doped, N-type single crystal silicon carbide substrate with the 4H hexagonal polytype. It provides a conductive base for appropriate SiC epitaxial structures and power-device manufacturing processes.
The company profile lists 2, 3, 4, 6 and 8 inch SiC wafers, corresponding to nominal diameters of 50.8, 76.2, 100, 150 and 200 mm. The public overview lists 4H-N SiC across 2–8 inches. Current availability must be confirmed.
N-type SiC substrates are conductive and are commonly used for vertical power-device platforms. Semi-insulating SiC substrates have much higher resistivity and are used where electrical isolation is needed, including GaN-on-SiC RF structures. These materials are not interchangeable.
The main specification table describes SiC substrates, not a defined epitaxial stack. The public overview separately mentions 4–6 inch SiC epitaxial wafers. For epitaxy enquiries, specify layer thickness, doping, uniformity and defects so the team can review the requirement.
The public 6 inch conductive SiC listing gives a resistivity of 0.015–0.028 Ω·cm with nitrogen doping. This value is not a universal specification for all SiC wafers and must not be applied to semi-insulating SiC substrates.
An off-axis SiC surface is used in many epitaxial processes to support controlled step-flow growth. The public 150 mm 4H-N listing specifies 4° toward [11-20] ± 0.5°. Confirm the surface face, direction and tolerance against your epitaxy process.
CMP means chemical mechanical polishing; MP means mechanical polishing. They describe different surface preparation routes. For an epi-ready SiC substrate, agree the target face, roughness, surface damage criteria and cleaning condition rather than relying on the polishing label alone.
SiC wafer grades address different acceptance criteria and intended uses. Production-grade SiC requires process-specific electrical, geometric, surface and crystal-defect limits. Research grade is selected for the experiment; dummy grade is intended for tool or handling evaluation, not automatically device fabrication.
Depending on your process, request limits and available measurements for micropipe density, basal plane dislocations, threading screw dislocations, polytype inclusions and surface defects. The portfolio MPD reference is below 1 cm−2, but grade-specific limits must be agreed in writing.
The company profile indicates customized thickness and lists bevel or C-shape edge options. Supply a drawing with SiC wafer diameter, thickness, tolerance, flat or notch, orientation and edge criteria. Manufacturing feasibility and pricing need technical review.
The company literature lists 2–6 inch SiC ingots and wafers in conductive and semi-insulating types. Seed-wafer grade is also listed. Specify polytype, conductivity, face, orientation, diameter, thickness and crystal-defect requirements for confirmation.
Request the available lot-specific inspection report and agree the required measurements before ordering SiC wafers. Possible items include dimensions, TTV, warp, roughness, orientation, resistivity and defect data. The document scope is subject to confirmation, not assumed for every grade.
No verified public price range or real-time stock record is supplied for these SiC wafers. Price and lead time depend on diameter, grade, quantity, surface finish and acceptance limits. Request a written quotation and inventory confirmation; this page does not promise immediate availability.
Keep SiC wafers in their specified protective packaging in a clean, dry environment. Use suitable clean gloves and wafer handling tools, avoid touching polished surfaces and follow your facility’s contamination-control procedure. Confirm the supplier’s packaging and cleaning instructions for the ordered lot.
09 / LET'S TALK MATERIALS
Share your specification. We will review the material, supply options and quotation requirements.
EMAILrisinn@xinkehui.cnPHONE / WHATSAPP+86 132 6287 9223SiC specifications: XINKEHUI company profile (page 21), SiC crystal introduction (page 8), and the public product pages below. Application context is general technical guidance, not a product certification.
