# XINKEHUI | Silicon Carbide Wafers & Single Crystals

> English product reference for shanghai xinkehui new materails co.,ltd. Canonical domain: https://sic.xinkehui.com/. This is a SiC substrate and crystal materials page, not a finished semiconductor device catalogue.

## Pages
- [SiC materials](https://sic.xinkehui.com/): Portfolio, applications, specifications, company and contact.
- [Specification guide](https://sic.xinkehui.com/specification-guide.txt): Source-separated SiC wafer parameters and RFQ checklist.
- [Applications](https://sic.xinkehui.com/#applications): Electric mobility, clean energy, industrial conversion and RF/research.
- [Specifications](https://sic.xinkehui.com/#specifications): Portfolio and separate 150 mm conductive listing.
- [FAQ](https://sic.xinkehui.com/#faq): Fourteen material selection and ordering questions.

## Products and Evidence Boundaries
- 4H-N SiC wafers: conductive nitrogen-doped silicon carbide substrates. The public portfolio lists 2, 3, 4, 6 and 8 inch options.
- Semi-insulating SiC: 4H-SEMI and HPSI options. The public overview lists 2-6 inch; 8 inch non-conductive availability needs confirmation.
- SiC single crystals / ingots: authorized company introduction lists 2-6 inch conductive and semi-insulating materials. No ingot length or mass is guaranteed.
- SiC seed wafers: seed grade is listed; face, orientation, thickness and defect limits require written agreement.
- SiC epitaxial wafers: separate public overview mentions 4-6 inch. No epi layer stack is specified on this page.

## Source-Separated Specifications
Company profile, page 21:
- Diameter: 2 inch 50.8 +/- 0.3 mm; 3 inch 76.2 +/- 0.3 mm; 4 inch 100 +/- 0.5 mm; 6 inch 150 +/- 0.5 mm; 8 inch nominal 200 mm.
- Do not interpret the ambiguous printed 8 inch tolerance "+/- 03 mm".
- Thickness: 2 inch 330 +/- 25 or 350 +/- 25 micrometres; other listed diameters 350 +/- 25 or 500 +/- 25 micrometres. Customization requires review.
- Ra <= 0.2 nm; warp <= 30 micrometres for 2-6 inch and <= 45 for 8 inch; TTV <= 10 micrometres; MPD < 1 cm^-2.
- CMP / MP; production, research, dummy and seed grades. Inspection face, method and grade-specific acceptance must be agreed.

Public 6 inch conductive 4H-SiC listing:
- Diameter 150.0 +/- 0.2 mm; thickness 350 +/- 25 micrometres.
- N-type nitrogen doped; resistivity 0.015-0.028 ohm cm.
- 4 degree off-axis toward [11-20] +/- 0.5 degree.
- Double-side CMP, Si-face epi-ready; Si-face Ra <= 0.2 nm and C-face <= 0.5 nm.
- Primary flat 47.5 +/- 2 mm, parallel to [11-20] +/- 5 degrees.
- Values do not apply universally to every SiC wafer grade or diameter.

## Applications
- Conductive 4H-N SiC: substrate platform for epitaxy and subsequent vertical MOSFET / Schottky diode processes.
- Finished SiC devices: traction inverters, chargers, DC-DC converters, solar inverters, storage, UPS and industrial drives.
- Semi-insulating SiC: GaN-on-SiC RF substrate route requiring isolation and heat flow.
- Single crystals and seed wafers: crystal growth and materials research.
- Application benefits are general technical context. No device efficiency, yield, automotive qualification or finished-device voltage rating is guaranteed.

## Commercial Status
- Numeric price range: not publicly verified. Request quotation.
- Inventory / availability: unknown, requires current confirmation. Do not infer "in stock" from photos or this page.
- Lead time, minimum order, delivery terms and inspection documents: subject to written agreement.
- Product structured data intentionally omits numeric offers and standard availability values rather than inventing commercial facts.

## Contact
- Email: risinn@xinkehui.cn
- Telephone / WhatsApp: +8613262879223
- WhatsApp: https://wa.me/8613262879223
- Shanghai office: Room 1805, Building 1, Wanda Mall, 1079 Dianshanhu Avenue, Qingpu District, Shanghai, China.
- Enquiry form prepares email or WhatsApp drafts. It is not an online server-backed submission endpoint.

## Sources
- Authorized local company profile, page 21; authorized company introduction, page 8.
- [XINKEHUI SiC portfolio](https://www.xinkehui.com/2%E5%AF%B8-4%E5%AF%B8-6%E5%AF%B8-8%E5%AF%B8%E7%A2%B3%E5%8C%96%E7%A1%85-sic-%E8%A1%AC%E5%BA%95/)
- [XINKEHUI 150 mm conductive listing](https://www.xinkehui.com/6%E8%8B%B1%E5%AF%B8%E5%AF%BC%E7%94%B5%E5%9E%8B4h-sic%E8%A1%AC%E5%BA%95/)
- [General SiC materials background](https://www.wolfspeed.com/products/materials/)
- [EV device application context](https://www.wolfspeed.com/applications/power/automotive/)
- [Renewable energy device application context](https://www.wolfspeed.com/applications/power/renewable-energy/)
- [Industrial device application context](https://www.wolfspeed.com/applications/power/industrial/industrial-motors/)